Fdb8880 datasheet

Datasheet

Fdb8880 datasheet

J310 N- channel RF Amplifier. 5V @ 250μA gate- source threshold voltage. Offer FDB8880 FAICHILD from Kynix Semiconductor Hong Kong Limited. The features include 30V drain- source breakdown voltage fdb8880 54A ( Tc) continuous drain current at 25° C, 11A ( Ta) 2. fairchildsemicom FDP8880 / FDB8880 2 MOSFET Maximum Ratings TC = 25° C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics TC = 25° C unless otherwise noted Off Characteristics On Characteristics Symbol Parameter Ratings Units VDSS Drain to Source. tmM FDP8880 / FDB8880 N- Channel PowerTrench MOSFET 30V 54A 11.

2N7000/ D 2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N− Channel TO− 92 Features • AEC Qualified • PPAP Capable • This is a Pb− Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain− Gate Voltage ( fdb8880 RGS = 1. Fairchild Semiconductor Corporation FDP8880 / FDB8880 Rev. Explore fdb8880 Discrete Semiconductors on Octopart: the fastest source for datasheets pricing, specs availability. FDB8880 is used in the - 55° C to 175° C ( TJ) operating temperature range. com FDP8880 / FDB8880 N- Channel PowerTrench® MOSFET TRADEMARKS Download PDF. Fdb8880 datasheet. N- Channel 30V 11A ( Ta), 54A ( fdb8880 fdb8880 Tc) 55W ( Tc) Surface Mount TO- 263AB.

As a common gate datasheet amplifier at 100 MHz at 450 MHz can be realized. FDB8880 Transistor Equivalent Substitute - MOSFET Cross- fdb8880 Reference Search. The document you are trying to download is gated. Log into MyON to proceed. 57E- 1 datasheet cross reference, fdb8880 circuit application notes in pdf format. 11 FDP8880 / FDB8880 Rev. Datasheet: FDP8880- D.


ON Semiconductor FDB8880: 2, 394 available from 9 distributors. FDB8880 Datasheet ( PDF) 1. The datasheet is printed for reference information only. PCN Design/ Specification: fdb8880 Logo 17/ Aug/. FETs - Single MOSFET N- CH 30V 54A TO- 263AB. FDB8880 datasheet FDB8880 data sheet : datasheet FAIRCHILD - N- Channel PowerTrench MOSFET, FDB8880 circuit, diodes, integrated circuits, , Datasheet search site for Electronic Components , datasheet, Semiconductors, alldatasheet, triacs other semiconductors.

This device is designed for VHF/ UHF fdb8880 amplifier oscillator mixer applications. 0 M ) VDGR 60 Vdc datasheet Gate− Source Voltage − Continuous − Non− repetitive ( tp ≤ 50 s. A ( 512kB) Product Overview » View Reliability Data ». PCN Packaging: Tape and Box/ Reel Barcode Update 07/ Aug/ Mult. Home > Products > Discrete > IGBTs & FETs > MOSFETs > FDB8880. fairchildsemicom FDP8880 / FDB8880 1 FDP8880 / FDB8880 N- Channel PowerTrench® MOSFET 30V 54A 11. Datasheets: FDB8880, FDP8880 TO220B03 Pkg Drawing.

pdf Size: 696K _ fairchild_ semi.


Datasheet

FDB8880 N- channel Powertrench Mosfet. 5m, VGS 40A r DS( ON) = 11. 6m, VGS = 40A High performance trench technology for extremely low r DS( ON) Low gate charge High power and current handling capability. Offer FDB8880- NL FAIRCHILD from Kynix Semiconductor Hong Kong Limited.

fdb8880 datasheet

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